SIRM-2100, SIRM-2500, SIRM-3000

The SIRM Bulk Microdefect Microanalyzers are non-contact and non-destructive optical instruments, which provide a complete characterization of bulk microdefects (BMDs), such as oxygen and metal precipitates, voids, stacking faults, slip lines, dislocations in the bulk and in the near-surface region of the semiconductor wafers.

Features and System Specifications:

• Non-contact, non-destructive analysis
• No sample preparation is needed
• Image collection in X-Y and X-Z planes
• Measurement of epi wafers
• Detectable particle size: down to 30 nm
• Principle of operation: brightfield confocal scanning microscopy
• Measurement depth: approximately 200 μm
• Depth resolution in Si: approximately 5 μm
• Detection limits for defect density: 10⁸-10¹⁰/cm³
• Mapping areas: 200 × 200 μm
• Depth range: 10 - 300 μm
• Depth resolution: 5 μm
• Lateral resolution: 0.4 μm
• Image size: 512 × 512 pixel
• Throughput: 60 sec/image
• Versatile evaluation software: automatic defect finding, exclusion, background correction
• From acquired data can be generated a database friendly file, which contains all the setting and evaluation results
• 300 mm wafer handling with automatic wafer recognition vision system

Options:

• Wafer handler: single cassette up to 300 mm wafer
• Defect position marking
• CCD camera
• Dual laser with user-defined wavelengths

BMD characterization:

• Denuded zone determination
• Stacking fault
• Dislocations
• Metal precipitation