PLB-55r Ingot Stress Inspection System

PLB-55r is a fast and non-destructive system to detect crystal defects in monocrystalline silicon ingots for photovoltaic application.

Types of detectable defects:

• Cracks, internal propagation of the cracks
• Slip lines
• Thermal induced internal stress

Features and System specification:

• Defective zone can be located and removed before any further processing
• Prevent sawing device damage due to defects in the ingot
• Precise removal of defective zone reduces wafer failure / breakage in further processing
• Precise removal of defective zone reduces the amount of discarded material
• Polarized infrared light is transmitted through the ingot
• The polarization of transmitted light does not change in the defect-free crystal but causes depolarization in the defected zone
• Sample preparation is not needed.
• Software analysis-controlled cut line calculation.
• Minimum sample resistivity 0,5 Ω*cm
• Sample length up to 7 m
• Measured length 550 mm from the end of the ingot