DLS-1100 Deep Level Transient Spectrometer

DLS-1100 Deep Level Transient Spectrometer provides metrology of the highest sensitivity for characterization and identification of impurities ans defects (known as traps) for the wafermaker market and research institutes.
The new technologies - a low-vibration cryostat with improved signal-to-noise ratio, a more accurate temperature controller and the improved evaluation software - allow for automatic control of the experimental parameters and automatic evaluation of trap concentration, activation energy and capture cross section on semiconductor samples.

Applications and Measurement modes

Electrically active defects’ identification and complete range of measurement modes, including:

• Sample quality test by I-V, C-V
• Capacitance transient measurement by using lock-in integrator for
  • temperature scan,
  • frequency scan,
  • depth profiling,
  • capture cross section,
  • MOS interface state density distribution measurements
• Digitization of the capacitance transient and evaluation for further analysis via Transient recorder
• Current DLS (I-DLS) option for high conductivity samples

Cryostats

DLS-1100 system can be combined with different cryostats capable of measuring with different temperature ranges:

• Low vibration cryostat chamber 30K-400K (optionally up to 800K)
• Closed Cycle He-cryostat from 30K to 325K 
• Bath-type Liquid Nitrogen cryostat (77K – 450K)
• Automatic LN₂ cryostat with controlled LN₂ flow from 80K to 550K or from 80K to 800K

Benefits

• Highest sensitivity for detection of trace levels of contaminants: down to 5x10⁷ atoms/cm³
• More accurate temperature measurement (<1 K) with up to 10 sensors
• Fully automated measurements, capability of capacitance transient digitization and numerical evaluation due to evaluation software improvements